Fundamental Zeolite Crystal Growth Rates from Simulation of Atomic Force Micrographs J.R.A. gratefully acknowledges the EPSRC for Advanced Fellowship no AF/990985 and N.H. acknowledges financial support from the EPSRC.

2001 ◽  
Vol 40 (21) ◽  
pp. 4065 ◽  
Author(s):  
Jonathan R. Agger ◽  
Noreen Hanif ◽  
Michael W. Anderson
Keyword(s):  
Crystal Growth ◽  
Growth Rates ◽  
Financial Support ◽  
Zeolite Crystal ◽  
Atomic Force ◽  
Atomic Force Micrographs

Comparison of copper sulphate pentahydrate growth rates determined by different methods

1990 ◽  
Vol 55 (7) ◽  
pp. 1691-1707 ◽  
Author(s):  
Miloslav Karel ◽  
Jiří Hostomský ◽  
Jaroslav Nývlt ◽  
Axel König
Keyword(s):  
Growth Rate ◽  
Crystal Growth ◽  
Fluidized Bed ◽  
Growth Rates ◽  
Copper Sulphate ◽  
Crystal Growth Rate ◽  
Effect Of Temperature ◽  
Rotating Disc ◽  
Shape Factors ◽  
Data Treatment

Crystal growth rates of copper sulphate pentahydrate (CuSO4.5 H2O) determined by different authors and methods are compared. The methods included in this comparison are: (i) Measurement on a fixed crystal suspended in a streaming solution, (ii) measurement on a rotating disc, (iii) measurement in a fluidized bed, (iv) measurement in an agitated suspension. The comparison involves critical estimation of the supersaturation used in measurements, of shape factors used for data treatment and a correction for the effect of temperature. Conclusions are drawn for the choice of values to be specified when data of crystal growth rate measurements are published.

Kinetics of the Crystallization of Potassium Sulfate

1993 ◽  
Vol 58 (8) ◽  
pp. 1848-1854 ◽  
Author(s):  
Miroslav Karel ◽  
Jaroslav Nývlt
Keyword(s):  
Experimental Data ◽  
Crystal Growth ◽  
Growth Rates ◽  
Potassium Sulfate ◽  
Kinetics Of

The kinetics of the crystallization of potassium sulfate has been determined using the MSMPR technique. Values of the nucleation and crystal growth rates evaluated from the experimental data are compared with the corresponding literature data.

Optical Properties of Sputtered Silver Granular Films

2005 ◽  
Vol 480-481 ◽  
pp. 287-292 ◽  
Author(s):  
S.E. Paje ◽  
F. Teran ◽  
J.M. Riveiro ◽  
J. Llopis ◽  
M.A. García ◽  
...  
Keyword(s):  
Silver Nanoparticles ◽  
Optical Properties ◽  
Optical Absorption ◽  
Surface Morphology ◽  
Silver Clusters ◽  
Plasmon Excitation ◽  
Granular Films ◽  
Silver Films ◽  
Atomic Force ◽  
Atomic Force Micrographs

In this research we study optical absorption and morphology of silver films prepared with a sputtering method. Silver granular films are obtained on a glass substrate for films with thickness smaller than about 60 Å. Superficial silver clusters of around 100 nm in diameter are clearly seen in the atomic force micrographs. The absorption of these samples are characterized by plasmon excitation in the 450-650 nm spectral range, which differs from the known excitation of silver nanoparticles fabricated by different techniques. The optical absorption of silver granular films depend on sputtering conditions like substrate temperature or deposition rate and correlates with the surface morphology.

scholarly journals Crystal growth of the core and rotated epitaxial shell of a heterometallic metal-organic framework revealed with atomic force microscopy

2021 ◽  
Author(s):  
Fajar Inggit Pambudi ◽  
Michael William Anderson ◽  
Martin Attfield
Keyword(s):  
Atomic Force Microscopy ◽  
Crystal Growth ◽  
Metal Organic Framework ◽  
Metal Organic Frameworks ◽  
Force Microscopy ◽  
The Core ◽  
Atomic Force ◽  
Metal Organic ◽  
Surface Crystal ◽  
Organic Framework

Atomic force microscopy has been used to determine the surface crystal growth of two isostructural metal-organic frameworks, [Zn2(ndc)2(dabco)] (ndc = 1,4-naphthalene dicarboxylate, dabco = 4-diazabicyclo[2.2.2]octane) (1) and [Cu2(ndc)2(dabco)] (2) from...

Growth and Characterization of bulk GaN by Ga Vapor Transport

2004 ◽  
Vol 831 ◽  
Author(s):  
Phanikumar Konkapaka ◽  
Huaqiang Wu ◽  
Yuri Makarov ◽  
Michael G. Spencer
Keyword(s):  
Growth Rates ◽  
Vapor Transport ◽  
Spiral Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Bulk Gan ◽  
Diffraction Patterns

ABSTRACTBulk GaN crystals of dimensions 8.5 mm × 8.5 mm were grown at growth rates greater than 200μm/hr using Gallium Vapor Transport technique. GaN powder and Ammonia were used as the precursors for growing bulk GaN. Nitrogen is used as the carrier gas to transport the Ga vapor that was obtained from the decomposition of GaN powder. During the process, the source GaN powder was kept at 1155°C and the seed at 1180°C. Using this process, it was possible to achieve growth rates of above 200 microns/hr. The GaN layers thus obtained were characterized using X-Ray diffraction [XRD], scanning electron microscopy [SEM], and atomic force microscopy [AFM]. X-ray diffraction patterns showed that the grown GaN layers are single crystals oriented along c direction. AFM studies indicated that the dominant growth mode was dislocation mediated spiral growth. Electrical and Optical characterization were also performed on these samples. Hall mobility measurements indicated a mobility of 550 cm2/V.s and a carrier concentration of 6.67 × 1018/cm3

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